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Part #: IRFD311
ObsoletePart Category:Small Signal Field-Effect Transistors
Manufacturer:HARRIS SEMICONDUCTOR
Description:Small Signal Field-Effect Transistor, 0.4A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRFD311 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 350.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.4000000000000000 |
| Drain-source On Resistance-Max (ohm) | 3.6000000000000000 |
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IRFD311 Datasheet & Equivalents - HARRIS SEMICONDUCTOR - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #IRFD311
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