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Part #: IRFCG20B
ActivePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRFCG20B SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1000.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 11.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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