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Part #: IRFCF30
OtherPart Category:Power Field-Effect Transistors
Manufacturer:INTERNATIONAL RECTIFIER CORP
Description:Power Field-Effect Transistor, 900V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRFCF30 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 900.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 4.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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