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Part #: IRFC250
OtherPart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRFC250 SPECIFICATIONS
| Status | Unknown |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0850000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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Equivalent Parts: Part #IRFC250
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