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Part #: IRFC11N50AB
ActivePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRFC11N50AB SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.5200000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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