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Part #: IRFBE20
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SEMICONDUCTOR TECHNOLOGY INC
Description:Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRFBE20 SPECIFICATIONS
| Status | Contact Mfr |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 800.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.8000000000000000 |
| Drain-source On Resistance-Max (ohm) | 6.5000000000000000 |
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