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Part #: IRFAE52
OtherPart Category:Power Field-Effect Transistors
Manufacturer:INTERNATIONAL RECTIFIER CORP
Description:Power Field-Effect Transistor, 6.6A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
IRFAE52 SPECIFICATIONS
| Status | Transferred |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 800.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.6000000000000000 |
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