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Part #: IRF9610SPBF
OtherPart Category:Power Field-Effect Transistors
Manufacturer:VISHAY SILICONIX
Description:Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IRF9610SPBF SPECIFICATIONS
| Status | Transferred |
| Additional Feature | FAST SWITCHING |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
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