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Part #: IRF7379QPBF
OtherPart Category:Power Field-Effect Transistors
Manufacturer:INTERNATIONAL RECTIFIER CORP
Description:Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
IRF7379QPBF SPECIFICATIONS
| Status | Transferred |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.8000000000000000 |
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