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IRF7342D2 Datasheet - INTERNATIONAL RECTIFIER CORP - Datasheets360.comPart #: IRF7342D2
OtherPart Category:Power Field-Effect Transistors
Manufacturer:INTERNATIONAL RECTIFIER CORP
Description:Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
IRF7342D2 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 55.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.4000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1050000000000000 |
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