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Part #: IRF630
OtherPart Category:Power Field-Effect Transistors
Manufacturer:ADVANCED POWER ELECTRONICS CORP
Description:Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF630 SPECIFICATIONS
| Status | Contact Mfr |
| Avalanche Energy Rating (Eas) (mJ) | 40.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
| Drain Current-Max (ID) (A) | 9.0000000000000000 |
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Equivalent Parts: Part #IRF630
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