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Part #: IRF624
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF624 SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 110.0000000000000000 |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 250.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.8000000000000000 |
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