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Part #: IRF5810
ObsoletePart Category:Small Signal Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Small Signal Field-Effect Transistor, 2.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
IRF5810 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.9000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0900000000000000 |
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IRF5810 Datasheet & Equivalents - INFINEON TECHNOLOGIES AG - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #IRF5810
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