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Part #: IRF5802TRPBF
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 0.9A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
IRF5802TRPBF SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 9.5000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 150.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.9000000000000000 |
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IRF5802TRPBF Datasheet & Equivalents - INFINEON TECHNOLOGIES AG - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #IRF5802TRPBF
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