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Part #: IRF511
ActivePart Category:Power Field-Effect Transistors
Manufacturer:NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Description:Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF511 SPECIFICATIONS
| Status | Active |
| Case Connection | ISOLATED |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.0000000000000000 |
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