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IRF40H233 Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.comPart #: IRF40H233
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 65A I(D), 40V, 0.0062ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRF40H233 SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 71.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
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