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IPW65R070C6 Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.comPart #: IPW65R070C6
OtherPart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
IPW65R070C6 SPECIFICATIONS
| Status | Unknown |
| Avalanche Energy Rating (Eas) (mJ) | 1160.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0700000000000000 |
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