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IPW60R041P6 Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.comPart #: IPW60R041P6
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
IPW60R041P6 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 1954.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0410000000000000 |
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