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IPI06CNE8NG Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.comPart #: IPI06CNE8NG
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 100A I(D), 85V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
IPI06CNE8NG SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 480.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 85.0000000000000000 |
| Drain Current-Max (ID) (A) | 100.0000000000000000 |
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