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IPC26N12N Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.comPart #: IPC26N12N
ObsoletePart Category:Small Signal Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Small Signal Field-Effect Transistor, 120V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IPC26N12N SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 120.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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