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Part #: IPB60R120P7
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB60R120P7 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 82.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1200000000000000 |
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