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Part #: IPB016N06L3GXT
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 180A I(D), 60V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
IPB016N06L3GXT SPECIFICATIONS
| Status | Active |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Rating (Eas) (mJ) | 634.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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Equivalent Parts: Part #IPB016N06L3GXT
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