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INV100FQ030A Datasheet - INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO LTD - Datasheets360.comPart #: INV100FQ030A
OtherPart Category:Power Field-Effect Transistors
Manufacturer:INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO LTD
Description:Power Field-Effect Transistor, 100A I(D), 100V, 0.0032ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET
INV100FQ030A SPECIFICATIONS
| Status | Contact Mfr |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 100.0000000000000000 |
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