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IMZA65R010M2H Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.comPart #: IMZA65R010M2H
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 144A I(D), 650V, 0.0131ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
IMZA65R010M2H SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 533.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
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