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Part #: IGN2429M400
OtherPart Category:RF Power Field-Effect Transistors
Manufacturer:INTEGRA TECHNOLOGIES INC
Description:RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET
IGN2429M400 SPECIFICATIONS
| Status | Contact Mfr |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 120.0000000000000000 |
| Drain Current-Max (ID) (A) | 48.0000000000000000 |
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