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Part #: IGLR65R140D2
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 13A I(D), 650V, 0.17ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
IGLR65R140D2 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 13.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1700000000000000 |
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