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Part #: IGLD65R055D2
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 18A I(D), 650V, 0.066ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
IGLD65R055D2 SPECIFICATIONS
| Status | Active |
| Case Connection | SOURCE |
| Configuration | SINGLE WITH BUILT-IN KELVIN SENSOR |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 18.0000000000000000 |
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