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IGLD60R070D1 Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.comPart #: IGLD60R070D1
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 15A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
IGLD60R070D1 SPECIFICATIONS
| Status | Discontinued |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
| Drain Current-Max (ID) (A) | 15.0000000000000000 |
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