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Part #: IGK080B041S
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 14A I(D), 40V, 0.008ohm, 2-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
IGK080B041S SPECIFICATIONS
| Status | Active |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
| Drain Current-Max (ID) (A) | 14.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0080000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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