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Part #: IGB110S101
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 23A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
IGB110S101 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 23.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0110000000000000 |
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