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Part #: IFD1N80
OtherPart Category:Power Field-Effect Transistors
Manufacturer:JSC INTEGRAL
Description:Power Field-Effect Transistor, 1.2A I(D), 800V, 18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IFD1N80 SPECIFICATIONS
| Status | Contact Mfr |
| Avalanche Energy Rating (Eas) (mJ) | 130.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 800.0000000000000000 |
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