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Part #: ICPB2005
ActivePart Category:RF Power Field-Effect Transistors
Manufacturer:MICROCHIP TECHNOLOGY INC
Description:RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Nitride, P-Channel, High Electron Mobility FET
ICPB2005 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE |
| Drain Current-Max (ID) (A) | 2.0000000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | X BAND |
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