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Part #: ICPB1010
ActivePart Category:RF Power Field-Effect Transistors
Manufacturer:MICROCHIP TECHNOLOGY INC
Description:RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Nitride, P-Channel, High Electron Mobility FET
ICPB1010 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Drain Current-Max (ID) (A) | 4.0000000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | KU BAND |
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