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Part #: IB1012S20
OtherPart Category:RF Power Bipolar Transistors
Manufacturer:INTEGRA TECHNOLOGIES INC
Description:RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
IB1012S20 SPECIFICATIONS
| Status | Contact Mfr |
| Case Connection | BASE |
| Collector-emitter Voltage-Max (V) | 85.0000000000000000 |
| Configuration | SINGLE |
| DC Current Gain-Min (hFE) | 10.0000000000000000 |
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