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GAN080-650EBE Datasheet - NEXPERIA - Datasheets360.comPart #: GAN080-650EBE
ActivePart Category:Power Field-Effect Transistors
Manufacturer:NEXPERIA
Description:Power Field-Effect Transistor, 29A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
GAN080-650EBE SPECIFICATIONS
| Status | Active |
| Case Connection | SOURCE |
| Configuration | SINGLE WITH BUILT-IN KELVIN SENSOR |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 29.0000000000000000 |
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