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Part #: FSS275
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SANYO SEMICONDUCTOR CO LTD
Description:Power Field-Effect Transistor, 6A I(D), 60V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FSS275 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0620000000000000 |
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