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Part #: FSS23A4D3
OtherPart Category:Power Field-Effect Transistors
Manufacturer:HARRIS SEMICONDUCTOR
Description:Power Field-Effect Transistor, 7A I(D), 250V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
FSS23A4D3 SPECIFICATIONS
| Status | Transferred |
| Additional Feature | RADIATION HARDENED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 250.0000000000000000 |
| Drain Current-Max (ID) (A) | 7.0000000000000000 |
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