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Part #: FSS207
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SANYO ELECTRIC CO LTD
Description:Power Field-Effect Transistor, 10A I(D), 20V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FSS207 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 10.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0130000000000000 |
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Equivalent Parts: Part #FSS207
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