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FSL913AOD3 Datasheet & Equivalents - HARRIS SEMICONDUCTOR - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationPart #: FSL913AOD3
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:HARRIS SEMICONDUCTOR
Description:Power Field-Effect Transistor, 7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
FSL913AOD3 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | RADIATION HARDENED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 7.0000000000000000 |
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Equivalent Parts: Part #FSL913AOD3
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