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Part #: FSL250D4
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:HARRIS SEMICONDUCTOR
Description:Power Field-Effect Transistor, 24A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
FSL250D4 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | RADIATION HARDENED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 200.0000000000000000 |
| Drain Current-Max (ID) (A) | 24.0000000000000000 |
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