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Part #: FS4VS-12
OtherPart Category:Power Field-Effect Transistors
Manufacturer:RENESAS TECHNOLOGY CORP
Description:Power Field-Effect Transistor, 4A I(D), 600V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FS4VS-12 SPECIFICATIONS
| Status | Transferred |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.0000000000000000 |
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