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Part #: FS02MR12A8MA2BBPSA1
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 1200V, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
FS02MR12A8MA2BBPSA1 SPECIFICATIONS
| Status | Active |
| Case Connection | ISOLATED |
| Configuration | COMPLEX |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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