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Part #: FS01MR12A8MA2B
ActivePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 1200V, 0.00213ohm, 6-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
FS01MR12A8MA2B SPECIFICATIONS
| Status | Active |
| Case Connection | ISOLATED |
| Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0021300000000000 |
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