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FQU17N08L Datasheet - FAIRCHILD SEMICONDUCTOR CORP - Datasheets360.comPart #: FQU17N08L
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:FAIRCHILD SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
FQU17N08L SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 100.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 80.0000000000000000 |
| Drain Current-Max (ID) (A) | 12.9000000000000000 |
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