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Part #: FQT1N60C
ActivePart Category:Small Signal Field-Effect Transistors
Manufacturer:ONSEMI
Description:Small Signal Field-Effect Transistor, 0.2A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FQT1N60C SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 0.2000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
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FQT1N60C Datasheet - ONSEMI - Datasheets360.com