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Part #: FQS4900TF
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 1.3A I(D), 60V, 0.65ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
FQS4900TF SPECIFICATIONS
| Status | Discontinued |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.3000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.6500000000000000 |
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Equivalent Parts: Part #FQS4900TF
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