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Part #: FQI9N25C
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:FAIRCHILD SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 8.8A I(D), 250V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FQI9N25C SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | FAST SWITCHING |
| Avalanche Energy Rating (Eas) (mJ) | 285.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 250.0000000000000000 |
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FQI9N25C Datasheet & Equivalents - FAIRCHILD SEMICONDUCTOR CORP - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #FQI9N25C
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