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Part #: FQI5N50
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:FAIRCHILD SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
FQI5N50 SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 300.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.5000000000000000 |
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FQI5N50 Datasheet & Equivalents - FAIRCHILD SEMICONDUCTOR CORP - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #FQI5N50
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