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Part #: FQD3N60CTM
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:FAIRCHILD SEMICONDUCTOR CORP
Description:Power Field-Effect Transistor, 2.4A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
FQD3N60CTM SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | AVALANCHE RATED |
| Avalanche Energy Rating (Eas) (mJ) | 150.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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FQD3N60CTM Datasheet - FAIRCHILD SEMICONDUCTOR CORP - Datasheets360.com