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Part #: FQA8N100C
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 8A I(D), 1000V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FQA8N100C SPECIFICATIONS
| Status | Active |
| Additional Feature | FAST SWITCHING |
| Avalanche Energy Rating (Eas) (mJ) | 850.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1000.0000000000000000 |
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FQA8N100C Datasheet & Equivalents - ONSEMI - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #FQA8N100C
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